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500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2010 EV kit, V CCG = V CCP = +4.75V to +5.25V, 50 ? environment, P IN = -20dBm, f IN = 500MHz to 1100MHz, V GCS = +1.0V,
V GFS = +5.0V, V GBP = +1.2V, V PBIN = V PDCS1 = V PDCS2 = 0V, V PF_S1 = +5V, V PBRAW = V PBEXP , T A = -40 ° C to +85 ° C. Typical val-
ues are at f IN = 880MHz, V CCG = V CCP = +5V, T A = +25 ° C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GAIN CONTROL SECTION
-14.9
Nominal Gain
Gain Variation Over Temperature
Gain Flatness
Gain-Expansion Breakpoint
Maximum
Gain-Expansion Breakpoint
Minimum
Gain-Expansion Breakpoint
Variation Over Temperature
Gain-Expansion
Gain-Expansion Slope
Gain-Slope Variation Over
Temperature
Noise Figure
Absolute Group Delay
Group Delay Ripple
Phase Ripple
Parasitic Phase Expansion
V GCS = 0V, V GFS = +5V
V GCS = +5V, V GFS = 0V
T A = -40 ° C to +85 ° C
Over a 100MHz band
V GBP = +5V
V GBP = +0.5V
T A = -40 ° C to +85 ° C
V GFS = +5V, P IN = -20dBm to +23dBm
V GFS = 0V, P IN = -20dBm to +23dBm
V GFS = +5V, P IN = +15dBm
V GFS = +0V, P IN = +15dBm
P IN = +15dBm, T A = -40 ° C to +85 ° C
Interconnects de-embedded
Over a 100MHz band
Over a 100MHz band, deviation from linear phase
P IN = -20dBm to +23dBm
-24.3
-7.6
-1.4
± 0.2
23
-2.5
-0.5
5.3
3.1
0.43
0.23
-0.01
14.9
1.12
± 0.02
± 0.09
+3
dB
dB
dB
dBm
dBm
dB
dB
dB/dB
dB/dB
dB
ns
ns
Degrees
Degrees
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses and characteristics of external components shown in the Typical Application Circuit , unless otherwise
noted.
4
_______________________________________________________________________________________
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